Company Contact:
Walter Croce
MagSil Corporation
walter@magsil.com
(408) 988-4100 Ext 209 |
Media/Analyst Contact:
Rafael Larin
Emissary Communications
rafael@emissarypr.com
(818) 541-9595
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Magsil Corporation and SAE Magnetics/Headway Technologies Resolve Patent Infringement Lawsuit
SAE Magnetics and Headway Technologies Receive License to Patents at Issue
SANTA CLARA, CA – September 30, 2009 – MagSil Corporation (MagSil) announced today that the litigation between MagSil and Massachusetts Institute of Technology (MIT), on the one hand, and SAE Magnetics (H.K.) Ltd. and Headway Technologies, Inc. (subsidiaries of TDK Corp. (TSE: 6762)), on the other hand, has been satisfactorily resolved by an out of court settlement, and SAE Magnetics and Headway Technologies have received licenses to the patents at issue in the lawsuit.
The litigation, pending in a Federal District Court in Delaware, remains ongoing against several other defendants, including Hitachi Ltd. (NYSE: HIT), Western Digital Corporation (NYSE: WDC), and ExcelStor Technology, Inc., among others. In the litigation, the defendants were accused of infringing two patents owned by MIT and exclusively licensed to MagSil, by making and selling hard disk drives or hard disk drive components using Tunneling Magnetoresistive (TMR) technology.
“We are pleased with our settlements with TDK subsidiaries and Seagate Technologies and we look forward to a favorable resolution of our claims against the remaining defendants,” said Jay Kamdar, President & CEO of MagSil Corporation. “MagSil has developed breakthrough magnetic memory technology for the next generation of mobile consumer, computing and storage systems. Our intellectual property is important to our business and product commercialization.”
MagSil and MIT are represented in the litigation by McKool Smith P.C. and by Morris, Nichols, Arsht & Tunnell LLP.
About MagSil Corporation
MagSil Corporation, headquartered in Santa Clara, California, has developed a pioneering Magnetoresistive Random Access Memory (MRAM) technology. MagSil’s patented innovative Magnetic Recording (iMR) cell architecture combines the best of magnetic technology with mainstream semiconductor manufacturing processes, enabling the development of a disruptive technology for stand-alone and embedded MRAM products. MagSil’s technology resolves the performance barriers currently experienced by system designers in legacy memory technologies. MagSil’s MRAM solutions provide the needed combination of higher performance, lower power, non-volatility, and superior endurance to realize next generation digital products; from mobile wireless, solid state drives, and consumer entertainment solutions to imaging, automotive, energy management and security devices. MagSil’s MRAM technology is silicon-proven, highly scalable, and manufacturing friendly yielding the most reliable, high density, ultra low-power, and cost-effective memory solutions. More information is available on MagSil's website at www.magsil.com.
Note: references to corporate, product or
other names may be trademarks or registered
trademarks of their respective owners.
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MagSil Corporation and Seagate Technology Resolve Patent Infringement Lawsuit
Seagate receives a license to patents at issue in lawsuit
SANTA CLARA, CA – July 14, 2009 – MagSil Corporation (MagSil) announced today that the litigation between MagSil and Massachusetts Institute of Technology (MIT), on the one hand, and Seagate Technology (NASDAQ: STX) and Maxtor Corporation, on the other hand, has been satisfactorily resolved by an out of court settlement, and the Seagate and Maxtor entities have received licenses to the patents at issue in the lawsuit.
The litigation, pending in a Federal court in Delaware, remains ongoing against several other defendants, including Hitachi Ltd. (NYSE: HIT), Samsung Electronics Co., Ltd. (KSE: 005930), Western Digital Corporation (NYSE: WDC), Toshiba America, Inc. (a subsidiary of Toshiba Corporation (TSE: 6502)), Headway Technologies, Inc. (a subsidiary of TDK Corp. (TSE: 6762)), and ExcelStor Technology, Inc. In the litigation, the defendants were accused of infringing two patents owned by MIT and exclusively licensed to MagSil, by making and selling hard disk drives or hard disk drive components using Tunneling Magnetoresistive (TMR) technology.
“We are pleased with the settlement and we look forward to a favorable resolution of our claims against the remaining defendants,” said Jay Kamdar, President & CEO of MagSil Corporation. “MagSil has developed breakthrough magnetic memory technology for the next generation of mobile consumer, computing and storage systems. Our intellectual property is important to our business and product commercialization.”
MagSil and MIT are represented in the litigation by McKool Smith P.C. and by Morris, Nichols, Arsht & Tunnell LLP.
About MagSil Corporation
MagSil Corporation, headquartered in Santa Clara, California, has developed a pioneering Magnetoresistive Random Access Memory (MRAM) technology. MagSil’s patented innovative Magnetic Recording (iMR) cell architecture combines the best of magnetic technology with mainstream semiconductor manufacturing processes, enabling the development of a disruptive technology for stand-alone and embedded MRAM products. MagSil’s technology resolves the performance barriers currently experienced by system designers in legacy memory technologies. MagSil’s MRAM solutions provide the needed combination of higher performance, lower power, non-volatility, and superior endurance to realize next generation digital products; from mobile wireless, solid state drives, and consumer entertainment solutions to imaging, automotive, energy management and security devices. MagSil’s MRAM technology is silicon-proven, highly scalable, and manufacturing friendly yielding the most reliable, high density, ultra low-power, and cost-effective memory solutions. More information is available on MagSil's website at www.magsil.com.
Note: references to corporate, product or
other names may be trademarks or registered
trademarks of their respective owners.
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MagSil
Corporation, a Developer of Magnetoresistive
Random Access Memory (MRAM), Adds Dr. Stefan
K. Lai, Intel® - Retired VP of Flash Memory
Group, to its Board of Directors
Addition of Dr. Lai Strengthens Leadership
as MagSil Preps for Commercialization of its
MRAM Technology and Next Venture Funding Round
in 2009
SANTA CLARA, Calif. – January 26, 2009 – MagSil Corporation, a semiconductor IP provider and fabless semiconductor company developing next generation Magnetoresistive Random Access Memory (MRAM) solutions, today announced the addition of Dr. Stefan K. Lai to its board of directors. The addition of Dr. Lai strengthens MagSil’s team as it preps to seek additional venture funding and advance its universal memory technology for full scale commercialization in 2009. In 2007, MagSil secured series B funding led by Entrepia Ventures with other participants, New Science Ventures and BlueRun Ventures.
“MagSil is on the verge of developing an MRAM-based universal memory solution to meet the technological advancement requirements of today’s and future digital electronics devices and services,” commented Dr. Lai. “As commercialization of MagSil’s technology is set to begin in 2009, I’m excited to join the company during this most important phase and look forward to providing the necessary technological and business guidance needed for long-term success.”
Prior to MagSil, Dr. Lai retired from Intel® in 2006 as vice president of the Flash memory group. He also served as Vice President of Intel’s Technology and Manufacturing Group. At Intel, he received the 2003 Patent of the Year Award and 2006 Intel Achievement Award for his contribution to an Intel / Micron® joint venture. Lai joined Intel in 1982, developing scalable E2PROM solutions. He co-invented the EPROM tunnel oxide (ETOX) Flash memory cell, which became an industry standard. He and his team developed 10 generations of ETOX technologies achieving 1,000 times cell size reduction.
“Dr. Lai’s leadership and ingenuity will add immediate strength to MagSil’s board as we prepare for the next big phase in MagSil’s development as a leader in MRAM technology,” commented Jay Kamdar, president and CEO of MagSil Corporation. “Naturally, we are excited about adding someone of Dr. Lai’s caliber to aid us in establishing MagSil’s technology and products as the preferred memory solution for the next generation of mobile and other electronics devices.”
Dr. Lai was recognized as an IEEE Fellow in 1998 for his research on properties of Silicon MOS interfaces and the development of Flash EPROM memory. He was also awarded the 2008 IEEE Andrew Grove Award for his contribution to Flash memories. He holds 7 patents.
Dr. Lai received his B.S. in applied physics
from California Institute of Technology, and
his Ph.D. in applied quantum physics from Yale
University.
About MagSil Corporation
MagSil Corporation, a privately-held venture
funded company, is developing a Magnetoresistive
Random Access Memory (MRAM) technology that
leverages advanced magnetic technology and
standard Silicon-based semiconductor technology.
This universal memory technology combines the
attributes of non-volatility, high-speed operation
and unlimited read-write endurance not found
in existing memory solutions. MagSil’s
technology will be ideal for Integrated Device
Manufacturers (IDMs), pure-play semiconductor
foundries and OEMs looking to embed or use stand-alone
MRAM devices in a system. The company is based
in Silicon Valley and was founded in 2004. For
more information, visit www.magsil.com.
Note: references to corporate, product or
other names may be trademarks or registered
trademarks of their respective owners.
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