MagSil is a VC backed company and we are hiring. We have exciting opportunities in developing, designing and marketing the next generation of memory solutions. Our engineering program is interdisciplinary, including physics, materials science, electrical engineering, semiconductor device design, fabrication, packaging and testing. The work style is highly collaborative and provides individuals with a high degree of autonomy and responsibility. If you have skills that can contribute to our success and are interested in this type of high-growth, high-reward start-up environment please contact us at jobs@magsil.com or use the link on this page to submit your resume.

MagSil Corporation and Western Digital Corporation Settle Patent Infringement Lawsuit

Western Digital Receives License to Patent at Issue

SANTA CLARA, CA – July 29, 2010 – MagSil Corporation (MagSil) today announced that the litigation between MagSil and Massachusetts Institute of Technology (MIT), on the one hand, and Western Digital Corporation (NYSE:WDC) and its affiliates, on the other hand, has been satisfactorily resolved by an out of court settlement, and Western Digital Corporation and its affiliates have received a license to the patent at issue in the lawsuit. The litigation, pending in the Federal district court in Delaware, remains ongoing against Hitachi Global Storage Technologies, Inc., Hitachi Data Systems Corporation, Hitachi America, Ltd., and Shenzen ExcelStor Technology Ltd. In the litigation, the defendants are accused of infringing a patent owned by MIT and exclusively licensed to MagSil, by making and selling hard disk drives or hard disk drive components using Tunneling Magnetoresistive (TMR) technology. To date, MagSil Corporation has reached out of court settlements with leading hard disk drive and drive components makers Seagate Technologies, SAE Magnetics and Headway Technologies, and Western Digital Corporation. “We are very pleased with this additional settlement. We will vigorously continue to exercise our right to defend and be fairly compensated for use of our patented innovations, and we look forward to a favorable resolution of our claims against the remaining defendants,” said Jay Kamdar, President & CEO of MagSil Corporation. “MagSil has developed breakthrough magnetic memory technology for the next generation of mobile consumer, computing and storage systems. The strength of our IP portfolio and our ongoing innovations provide a sustainable competitive advantage and positions MagSil for greater market success.” MagSil and MIT are represented in the litigation by McKool Smith P.C. and by Morris, Nichols, Arsht & Tunnell LLP.

About MagSil Corporation
MagSil Corporation, headquartered in Santa Clara, California, has developed a pioneering Magnetoresistive Random Access Memory (MRAM) technology. MagSil’s patented innovative Magnetic Recording (iMR) cell architecture combines the best of magnetic technology with mainstream semiconductor manufacturing processes, enabling the development of a disruptive technology for stand-alone and embedded MRAM products. MagSil’s technology resolves the performance barriers currently experienced by system designers in legacy memory technologies. MagSil’s MRAM solutions provide the needed combination of higher performance, lower power, non-volatility, and superior endurance to realize next generation digital products; from mobile wireless, solid state drives, and consumer entertainment solutions to imaging, automotive, energy management and security devices. MagSil’s MRAM technology is silicon-proven, highly scalable, and manufacturing friendly yielding the most reliable, high density, ultra low-power, and cost-effective memory solutions. More information is available on MagSil's website at www.magsil.com.

Note: references to corporate, product or other names may be trademarks or registered trademarks of their respective owners.

# # #

MagSil Corporation, a Developer of Magnetoresistive Random Access Memory (MRAM), Adds Dr. Stefan K. Lai, Intel® - Retired VP of Flash Memory Group, to its Board of Directors

Addition of Dr. Lai Strengthens Leadership as MagSil Preps for Commercialization of its MRAM Technology and Next Venture Funding Round in 2009

SANTA CLARA, Calif. – January 26, 2009 – MagSil Corporation, a semiconductor IP provider and fabless semiconductor company developing next generation Magnetoresistive Random Access Memory (MRAM) solutions, today announced the addition of Dr. Stefan K. Lai to its board of directors. The addition of Dr. Lai strengthens MagSil’s team as it preps to seek additional venture funding and advance its universal memory technology for full scale commercialization in 2009. In 2007, MagSil secured series B funding led by Entrepia Ventures with other participants, New Science Ventures and BlueRun Ventures.

“MagSil is on the verge of developing an MRAM-based universal memory solution to meet the technological advancement requirements of today’s and future digital electronics devices and services,” commented Dr. Lai. “As commercialization of MagSil’s technology is set to begin in 2009, I’m excited to join the company during this most important phase and look forward to providing the necessary technological and business guidance needed for long-term success.”

Prior to MagSil, Dr. Lai retired from Intel® in 2006 as vice president of the Flash memory group. He also served as Vice President of Intel’s Technology and Manufacturing Group. At Intel, he received the 2003 Patent of the Year Award and 2006 Intel Achievement Award for his contribution to an Intel / Micron® joint venture. Lai joined Intel in 1982, developing scalable E2PROM solutions. He co-invented the EPROM tunnel oxide (ETOX) Flash memory cell, which became an industry standard. He and his team developed 10 generations of ETOX technologies achieving 1,000 times cell size reduction.

“Dr. Lai’s leadership and ingenuity will add immediate strength to MagSil’s board as we prepare for the next big phase in MagSil’s development as a leader in MRAM technology,” commented Jay Kamdar, president and CEO of MagSil Corporation. “Naturally, we are excited about adding someone of Dr. Lai’s caliber to aid us in establishing MagSil’s technology and products as the preferred memory solution for the next generation of mobile and other electronics devices.” Dr. Lai was recognized as an IEEE Fellow in 1998 for his research on properties of Silicon MOS interfaces and the development of Flash EPROM memory. He was also awarded the 2008 IEEE Andrew Grove Award for his contribution to Flash memories. He holds 7 patents.

Dr. Lai received his B.S. in applied physics from California Institute of Technology, and his Ph.D. in applied quantum physics from Yale University.

About MagSil Corporation
MagSil Corporation, a privately-held venture funded company, is developing a Magnetoresistive Random Access Memory (MRAM) technology that leverages advanced magnetic technology and standard Silicon-based semiconductor technology. This universal memory technology combines the attributes of non-volatility, high-speed operation and unlimited read-write endurance not found in existing memory solutions. MagSil’s technology will be ideal for Integrated Device Manufacturers (IDMs), pure-play semiconductor foundries and OEMs looking to embed or use stand-alone MRAM devices in a system. The company is based in Silicon Valley and was founded in 2004. For more information, visit www.magsil.com.

Note: references to corporate, product or other names may be trademarks or registered trademarks of their respective owners.

# # #